onsemi NTMFS7D8N10GTWG

onsemi · FETs & Power MOSFETs · MPN NTMFS7D8N10GTWG

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)624.5pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation187W
RDS(on)7.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)66pF
Number1 N-channel
Input Capacitance(Ciss)6.18nF
TypeN-Channel

Technical details

N-Channel 100V 110A 187W Surface Mount SO-8-FL-5.9mm

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