onsemi NTMFS6H836NT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS6H836NT1G

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)15A;74A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.7W;89W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.64nF

Technical details

N-Channel 80V 15A 74A 3.7W 89W Surface Mount SO-8FL

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