onsemi · FETs & Power MOSFETs · MPN NTMFS6H818NLT1G
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| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 135A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 140W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.844nF |
80V 135A 2V 140W 2.7mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS