onsemi · FETs & Power MOSFETs · MPN NTMFS6H801NT1G
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| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 157A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 166W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.12nF |
| Type | N-Channel |
80V 157A 4V 166W 2.8mΩ@10V 1 N-channel N-Channel DFN-5(5.1x6.1) Single FETs, MOSFETs RoHS