onsemi NTMFS6H800NLT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS6H800NLT1G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage80V
Current - Continuous Drain(Id)224A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.9nF

Technical details

80V 224A 1.2V 1.9mΩ@10V 1 N-channel SO-8FL-EP-5.8mm Single FETs, MOSFETs RoHS

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