onsemi · FETs & Power MOSFETs · MPN NTMFS6B05NT3G
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 104A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 138W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
100V 104A 4V 138W 6.5mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS