onsemi NTMFS6B03NT3G

onsemi · FETs & Power MOSFETs · MPN NTMFS6B03NT3G

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)132A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation165W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF

Technical details

100V 132A 4V 165W 4.8mΩ@10V 1 N-channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

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