onsemi · FETs & Power MOSFETs · MPN NTMFS5H600NLT1G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 89nC@10V |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.68nF |
60V 250A 2V 160W 1.3mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS