onsemi · FETs & Power MOSFETs · MPN NTMFS5C410NLTWFT1G
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| Gate Charge(Qg) | 66nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 330A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF |
| RDS(on) | 0.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.862nF |
40V 330A 2V 167W 0.65mΩ@10V 1 N-channel DFN-5(4.9x5.9) Single FETs, MOSFETs RoHS