onsemi · FETs & Power MOSFETs · MPN NTMFS5832NLT1G
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| Gate Charge(Qg) | 25nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 111A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
40V 111A 3V 96W 3.1mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS