onsemi · FETs & Power MOSFETs · MPN NTMFS5113PLT1G
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| Gate Charge(Qg) | 45nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A;64A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 319pF |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.4nF |
60V 2.5V 150W 10.5mΩ@10V 1 P-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS