onsemi · FETs & Power MOSFETs · MPN NTMFS4H02NFT1G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 193A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.652nF |
25V 193A 2.1V 83W 1.4mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS