onsemi NTMFS4H01NFT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS4H01NFT1G

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage25V
Output Capacitance(Coss)3.416nF
Current - Continuous Drain(Id)334A
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)175.3pF
RDS(on)1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.538nF
TypeN-Channel

Technical details

N-Channel 25V 334A 125W Surface Mount SO-8FL

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