onsemi · FETs & Power MOSFETs · MPN NTMFS4H013NFT3G
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| Gate Charge(Qg) | 26nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 209A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 114pF |
| RDS(on) | 0.72mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.923nF |
25V 209A 2.1V 104W 0.72mΩ@10V 1 N-channel SO-8FL-EP-5.8mm Single FETs, MOSFETs RoHS