onsemi · FETs & Power MOSFETs · MPN NTMFS4H013NFT1G
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 2.537nF |
| Current - Continuous Drain(Id) | 269A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 114pF |
| RDS(on) | 1.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.923nF |
| Type | N-Channel |
25V 269A 2.1V 104W 1.4mΩ@4.5V 1 N-channel N-Channel DFN-5(5x6) Single FETs, MOSFETs RoHS