onsemi · FETs & Power MOSFETs · MPN NTMFS4D2N10MDT1G
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| Gate Charge(Qg) | 40nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 800pF |
| Current - Continuous Drain(Id) | 113A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 132W |
| RDS(on) | 7.1mΩ@6V |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
| Type | N-Channel |
100V 113A 4V 132W 7.1mΩ@6V 1 N-channel N-Channel DFN-5(5.1x6.1) Single FETs, MOSFETs RoHS