onsemi · FETs & Power MOSFETs · MPN NTMFS4C810NAT3G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 18.6nC@10V |
| Output Capacitance(Coss) | 574pF |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 23.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 162pF |
| RDS(on) | 5.88mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 987pF |
| Type | N-Channel |
30V 46A 2.2V 23.6W 5.88mΩ@10V 1 N-channel N-Channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS