onsemi · FETs & Power MOSFETs · MPN NTMFS4C59NT1G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 22.2nC@10V |
| Current - Continuous Drain(Id) | 9A;52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | - |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.252nF |
30V 2.1V 5.8mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS