onsemi NTMFS4C55NT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS4C55NT1G

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Specifications

Output Capacitance(Coss)1.215nF
Pd - Power Dissipation-
Configuration-
Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.972nF

Technical details

N-Channel 30V 11.9A Surface Mount SO-8FL

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