onsemi NTMFS4C09NT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS4C09NT1G

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Specifications

Gate Charge(Qg)22.2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)126pF
RDS(on)5.8mΩ@10V
Number-
Input Capacitance(Ciss)1.252nF

Technical details

30V 52A 6W Surface Mount SO-8FL

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