onsemi · FETs & Power MOSFETs · MPN NTMFS4C09NCT1G
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| Output Capacitance(Coss) | 610pF |
|---|---|
| Pd - Power Dissipation | 25.5W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 22.2nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| RDS(on) | 5.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 126pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.252nF |
25.5W 30V 1.3V 5.8mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS