onsemi · FETs & Power MOSFETs · MPN NTMFS4C09NAT1G
No reviews yet — be the first to review onsemi NTMFS4C09NAT1G.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 1.9nC@4.5V |
| Current - Continuous Drain(Id) | 9A;52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 760mW |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.252nF |
30V 2.1V 760mW 5.8mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS