onsemi · FETs & Power MOSFETs · MPN NTMFS4C032NT3G
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| Gate Charge(Qg) | 7.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 21.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF |
| RDS(on) | 6.11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 770pF |
30V 38A 2.1V 21.6W 6.11mΩ@10V 1 N-channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS