onsemi NTMFS4C029NT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS4C029NT1G

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Specifications

Gate Charge(Qg)9.7nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation2.49W
Reverse Transfer Capacitance (Crss@Vds)162pF
RDS(on)5.88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)987pF

Technical details

N-Channel 30V 46A 2.49W Surface Mount SO-8FL

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