onsemi · FETs & Power MOSFETs · MPN NTMFS4C025NT1G
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| Gate Charge(Qg) | 11.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 69A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 30.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 3.41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.683nF |
30V 69A 2.1V 30.5W 3.41mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS