onsemi · FETs & Power MOSFETs · MPN NTMFS4C01NT1G
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| Gate Charge(Qg) | 139nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 5.073nF |
| Current - Continuous Drain(Id) | 303A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 134W |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| RDS(on) | 1.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.144nF |
| Type | N-Channel |
30V 303A 2.2V 134W 1.2mΩ@4.5V 1 N-channel N-Channel DFN-5(6.3x5.3) Single FETs, MOSFETs RoHS