onsemi NTMFS4983NFT3G

onsemi · FETs & Power MOSFETs · MPN NTMFS4983NFT3G

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Specifications

Gate Charge(Qg)47.9nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)106A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.25nF

Technical details

30V 106A 2.3V 38W 2.1mΩ@10V 1 N-channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

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