onsemi · FETs & Power MOSFETs · MPN NTMFS4841NT1G
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| Gate Charge(Qg) | 11.5nC@11.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 57A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.17W |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF |
| RDS(on) | 11.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.436nF |
30V 57A 1.5V 2.17W 11.4mΩ@4.5V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS