onsemi NTMFS4833NT3G

onsemi · FETs & Power MOSFETs · MPN NTMFS4833NT3G

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Specifications

Gate Charge(Qg)39nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)191A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)650pF
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.6nF

Technical details

30V 191A 2.5V 125W 1.3mΩ@10V 1 N-channel DFN-5(5x6) Single FETs, MOSFETs RoHS

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