onsemi · FETs & Power MOSFETs · MPN NTMFS4833NT1G
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 88nC@11.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 191A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF |
| RDS(on) | 3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.6nF |
30V 191A 2.5V 125W 3mΩ@4.5V 1 N-channel N-Channel DFN-5(5x6) Single FETs, MOSFETs RoHS