onsemi · FETs & Power MOSFETs · MPN NTMFS4833NAT1G
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| Gate Charge(Qg) | 37nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 191A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 113.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 580pF |
| RDS(on) | 1.4mΩ@10V~11V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.1nF |
30V 191A 1.9V 113.6W 1.4mΩ@10V~11V 1 N-channel SO-8-FL-5.9mm Single FETs, MOSFETs RoHS