onsemi · FETs & Power MOSFETs · MPN NTMFS3D2N10MDT1G
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| Gate Charge(Qg) | 71.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 142A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 5.8mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
100V 142A 2V 2.8W 5.8mΩ@6V 1 N-channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS