onsemi · FETs & Power MOSFETs · MPN NTMFS2D1N08XT1G
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 201A |
| Output Capacitance(Coss) | 1.29nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 164W |
| RDS(on) | 1.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Input Capacitance(Ciss) | 4.47nF |
| Type | N-Channel |
80V 201A 3.6V 164W 1.7mΩ@10V N-Channel DFN-5(5x6) Single FETs, MOSFETs RoHS