onsemi · FETs & Power MOSFETs · MPN NTMFS0D8N02P1ET1G
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| Gate Charge(Qg) | 52nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 365A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 129pF |
| RDS(on) | 0.44mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.6nF |
25V 365A 2V 139W 0.44mΩ@10V 1 N-channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS