onsemi NTMFS0D7N03CGT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS0D7N03CGT1G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)191nC@10V
Current - Continuous Drain(Id)409A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)0.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)16nF

Technical details

30V 409A 1.3V 4W 0.65mΩ@10V 1 N-channel DFN-5(4.9x5.9) Single FETs, MOSFETs RoHS

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