onsemi · FETs & Power MOSFETs · MPN NTMFS0D7N03CGT1G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 191nC@10V |
| Current - Continuous Drain(Id) | 409A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 0.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16nF |
30V 409A 1.3V 4W 0.65mΩ@10V 1 N-channel DFN-5(4.9x5.9) Single FETs, MOSFETs RoHS