onsemi NTMFS008N12MCT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS008N12MCT1G

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)33nC@10V
Output Capacitance(Coss)1.15nF
Current - Continuous Drain(Id)79A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation102W
Reverse Transfer Capacitance (Crss@Vds)4.9pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.705nF
TypeN-Channel

Technical details

120V 79A 4V 102W 8mΩ@10V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS

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