onsemi · FETs & Power MOSFETs · MPN NTMFS006N12MCT1G
No reviews yet — be the first to review onsemi NTMFS006N12MCT1G.
| Gate Charge(Qg) | 42nC |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 104A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| RDS(on) | 13mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.365nF |
| Type | N-Channel |
120V 104A 4V 41W 13mΩ@6V 1 N-channel N-Channel DFN-5(5.9x4.9) Single FETs, MOSFETs RoHS