onsemi NTMFS005P03P8ZST1G

onsemi · FETs & Power MOSFETs · MPN NTMFS005P03P8ZST1G

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Specifications

Gate Charge(Qg)183nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)15.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation900mW
RDS(on)2.7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.88nF

Technical details

30V 15.3A 3V 900mW 2.7mΩ@10V 1 P-Channel DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS

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