onsemi NTMFS005N10MCLT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS005N10MCLT1G

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.35nF
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation125W
RDS(on)5.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)22pF
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

N-Channel 100V 105A 125W Surface Mount SO-8FL

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