onsemi NTMFS002P03P8ZT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS002P03P8ZT1G

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)365nC@10V
Current - Continuous Drain(Id)263A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation138.9W
Reverse Transfer Capacitance (Crss@Vds)4.87nF
RDS(on)1.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)14.95nF
TypeP-Channel

Technical details

30V 263A 138.9W 1.4mΩ@10V 1 P-Channel P-Channel SO-8FL-EP-5.8mm Single FETs, MOSFETs RoHS

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