onsemi NTMFS002N10MCLT1G

onsemi · FETs & Power MOSFETs · MPN NTMFS002N10MCLT1G

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Specifications

Gate Charge(Qg)97nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)22A;175A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W;189W
RDS(on)2.8mΩ
Number1 N-channel
Input Capacitance(Ciss)7.2nF

Technical details

N-Channel 100V 22A 175A 3W 189W Surface Mount SO-8FL

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