onsemi NTMFD6H846NLT1G

onsemi · FETs & Power MOSFETs · MPN NTMFD6H846NLT1G

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Specifications

Current - Continuous Drain(Id)31A
RDS(on)15mΩ@10V
Pd - Power Dissipation34W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage80V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)7pF
Number2 N-Channel
Input Capacitance(Ciss)900pF
Gate Charge(Qg)17nC@10V
Vgs±20V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 80V 31A Surface Mount DFN-8(4.9x5.9)

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