onsemi NTMFD6H840NLT1G

onsemi · FETs & Power MOSFETs · MPN NTMFD6H840NLT1G

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Specifications

Current - Continuous Drain(Id)74A
RDS(on)5.7mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage80V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number2 N-Channel
Input Capacitance(Ciss)2.002nF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃

Technical details

74A 5.7mΩ@10V 2V 2 N-Channel DFN-8(4.9x5.9) FET, MOSFET Arrays RoHS

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