onsemi NTMFD5C680NLT1G

onsemi · FETs & Power MOSFETs · MPN NTMFD5C680NLT1G

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Specifications

Current - Continuous Drain(Id)7.5A;26A
RDS(on)28mΩ@10V
Pd - Power Dissipation3W;19W
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)350pF
Gate Charge(Qg)5nC@10V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 60V 7.5A 26A 3W 19W Surface Mount DFN-8(5x6)

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