onsemi · FETs & Power MOSFETs · MPN NTMFD5C650NLT1G
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| Gate Charge(Qg) | 16nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 111A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.546nF |
60V 111A 2.2V 125W 2 N-Channel DFN-8(4.9x5.9) Single FETs, MOSFETs RoHS