onsemi · FETs & Power MOSFETs · MPN NTMFD1D6N03P8
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| Current - Continuous Drain(Id) | 109A |
|---|---|
| Pd - Power Dissipation | 29W |
| RDS(on) | 5mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| Input Capacitance(Ciss) | 6.43nF |
| Gate Charge(Qg) | 87nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.695nF |
109A 29W 5mΩ@10V 3V PQFN-8(5x6) FET, MOSFET Arrays RoHS