onsemi NTMFD1D1N02X

onsemi · FETs & Power MOSFETs · MPN NTMFD1D1N02X

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Specifications

Current - Continuous Drain(Id)75A;178A
RDS(on)0.87mΩ@10V
Pd - Power Dissipation27W;44W
Gate Threshold Voltage (Vgs(th))1.2V;1.6V
Drain to Source Voltage25V
Reverse Transfer Capacitance (Crss@Vds)47pF;118pF
Number1 N-channel
Input Capacitance(Ciss)1.08nF;4.265nF
Gate Charge(Qg)6.8nC@4.5V;27nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

0.87mΩ@10V 1 N-channel PQFN-8 FET, MOSFET Arrays RoHS

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