onsemi · FETs & Power MOSFETs · MPN NTMD6P02R2G
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| Current - Continuous Drain(Id) | 7.8A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 50mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.7nF |
| Gate Charge(Qg) | 35nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 775pF |
7.8A 2W 50mΩ@2.5V 1.2V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS