onsemi · FETs & Power MOSFETs · MPN NTMD6N03R2G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.29W |
| RDS(on) | - |
| Input Capacitance(Ciss) | 950pF |
30V 6A 2.5V 1.29W SOIC-8 Single FETs, MOSFETs RoHS