onsemi · FETs & Power MOSFETs · MPN NTMD6N02R2G
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| RDS(on) | 35mΩ@4.5V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.1nF |
| Gate Charge(Qg) | 20nC@16V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 6A 2W Surface Mount SOIC-8